APTM50HM75SCT APTM50HM75SCT ? rev 1 ma y , 2004 apt website ? htt p :/ / www.advanced p ower.com 1 ? 7 out1 out2 g1 s1 cr2a q1 cr1a cr3b cr1b g2 s2 ntc1 cr2b q2 cr4b 0/vbus cr4a cr3a g4 g3 s3 s4 q4 nt c2 q3 vbus out1 out2 ntc1 ntc2 g3 s3 vbus g1 s1 g4 g2 s2 0/vbus s4 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be follow ed symbol parameter max ratings unit v dss drain - source breakdown voltage 500 v t c = 25c 46 i d continuous drain current t c = 80c 34 i dm pulsed drain current 184 a v gs gate - source voltage 30 v r dson drain - source on resistance 75 m p d maximum power dissipation t c = 25c 357 w i ar avalanche current (repetitive and non repetitive) 46 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 2500 mj v dss = 500v r dson = 75m max @ tj = 25c i d = 46a @ tc = 25c application motor control switched mode power supplies uninterruptible power supplies features power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated parallel sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf kelvin source for easy drive very low stray inductance - symmetrical design - lead frames for power connections internal thermistor for temperature monitoring high level of integration benefits outstanding performance at high frequency operation direct mounting to heatsink (isolated package) low junction to case thermal resistance solderable terminals both for power and signal fo r easy pcb mounting low profile full bridge series & sic parallel diodes mosfet power module
APTM50HM75SCT APTM50HM75SCT ? rev 1 ma y , 2004 apt website ? htt p :/ / www.advanced p ower.com 2 ? 7 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv dss drain - source breakdown voltage v gs = 0v, i d = 250a 500 v v gs = 0v,v ds = 500v t j = 25c 100 i dss zero gate voltage drain current v gs = 0v,v ds = 400v t j = 125c 500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 23a 75 m v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 3 5 v i gss gate ? source leakage current v gs = 30 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 5590 c oss output capacitance 1180 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 85 pf q g total gate charge 123 q gs gate ? source charge 33 q gd gate ? drain charge v gs = 10v v bus = 250v i d = 46a 65 nc t d(on) turn-on delay time 18 t r rise time 35 t d(off) turn-off delay time 87 t f fall time inductive switching @ 125c v gs = 15v v bus = 333v i d = 46a r g = 5 77 ns e on turn-on switching energy 453 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 333v i d = 46a, r g = 5 ? 726 j e on turn-on switching energy 745 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 333v i d = 46a, r g = 5 ? 846 j in accordance with jedec standard jesd24-1. series diode ratings and characteristics symbol characteristic test conditions min typ max unit i f(av) maximum average forward current 50% duty cycle t c = 85c 30 a i f = 30a 1.1 1.15 i f = 60a 1.4 v f diode forward voltage i f = 30a t j = 125c 0.9 v t j = 25c 24 t rr reverse recovery time i f = 30a v r = 133v di/dt = 200a/s t j = 125c 48 ns t j = 25c 33 q rr reverse recovery charge i f = 30a v r = 133v di/dt = 200a/s t j = 125c 150 nc
APTM50HM75SCT APTM50HM75SCT ? rev 1 ma y , 2004 apt website ? htt p :/ / www.advanced p ower.com 3 ? 7 parallel diode ratings and characteristics symbol characteristic test conditions min typ max unit i f(av) maximum average forward current 50% duty cycle tc = 125c 20 a t j = 25c 1.6 1.8 v f diode forward voltage i f = 20a t j = 175c 2.0 2.4 v q c total capacitive charge i f = 20a, v r = 300v di/dt =800a/s 28 nc f = 1mhz, v r = 200v 130 q total capacitance f = 1mhz, v r = 400v 100 pf thermal and package characteristics symbol characteristic min typ max unit transistor 0.35 series diode 1.2 r thjc junction to case parallel diode 1.5 c/w v isol rms isolation voltage, any terminal to case t =1 min, isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 4.7 n.m wt package weight 160 g temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 68 k b 25/85 t 25 = 298.16 k 4080 k
t t b r r t 1 1 exp 25 85 / 25 25 package outline t: thermistor temperature r t : thermistor value at t
APTM50HM75SCT APTM50HM75SCT ? rev 1 ma y , 2004 apt website ? htt p :/ / www.advanced p ower.com 4 ? 7 typical mosfet performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5.5v 6v 6.5v 7v 7.5v 8v 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =10&15v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 20 40 60 80 100 120 012345678 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 0 20406080100 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 23a 0 10 20 30 40 50 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTM50HM75SCT APTM50HM75SCT ? rev 1 ma y , 2004 apt website ? htt p :/ / www.advanced p ower.com 5 ? 7 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d =23a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) limited b y r d s on maximum safe operating area 100ms 10ms 1ms 100s 0.1 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r dson single pulse t j =150c ciss crss coss 10 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ce =100v v ce =250v v ce =400v 0 2 4 6 8 10 12 14 0 20406080100120140160 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =46a t j =25c
APTM50HM75SCT APTM50HM75SCT ? rev 1 ma y , 2004 apt website ? htt p :/ / www.advanced p ower.com 6 ? 7 delay times vs current td(on) td(off) 0 20 40 60 80 100 10 20 30 40 50 60 70 i d , drain current (a) t d(on) and t d(off) (ns) v ds =333v r g =5 ? t j =125c l=100h rise and fall times vs current t r t f 0 20 40 60 80 100 120 10 20 30 40 50 60 70 i d , drain current (a) t r and t f (ns) v ds =333v r g =5 ? t j =125c l=100h 0 50 100 150 200 250 300 350 400 10 15 20 25 30 35 40 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =333v d=50% r g =5 ? t j =125c t j =25c t j =150c 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage switching energy vs current e on e off 0 0.4 0.8 1.2 1.6 2 10 20 30 40 50 60 70 i d , drain current (a) switching energy (mj) v ds =333v r g =5 ? t j =125c l=100h e on e off 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1020304050 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =333v i d =46a t j =125c l=100h
APTM50HM75SCT APTM50HM75SCT ? rev 1 ma y , 2004 apt website ? htt p :/ / www.advanced p ower.com 7 ? 7 typical sic diode performance curve maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 5 10 15 20 25 30 35 40 00.511.522.533.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 50 100 150 200 250 300 350 400 200 300 400 500 600 700 800 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 100 200 300 400 500 600 700 800 1 10 100 1000 v r reverse voltage c, capacitance (pf) apt reserves the right to change, without notice, the specifications and information contained herein apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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